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Pseudo-nanostructure and trapped-hole release induce high thermoelectric performance in PbTe.
Jia, Baohai; Wu, Di; Xie, Lin; Wang, Wu; Yu, Tian; Li, Shangyang; Wang, Yan; Xu, Yanjun; Jiang, Binbin; Chen, Zhiquan; Weng, Yuxiang; He, Jiaqing.
Affiliation
  • Jia B; Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China.
  • Wu D; Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, China.
  • Xie L; Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China.
  • Wang W; Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China.
  • Yu T; Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China.
  • Li S; Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China.
  • Wang Y; Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China.
  • Xu Y; Laboratory of Soft Matter Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
  • Jiang B; School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China.
  • Chen Z; Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China.
  • Weng Y; Laboratory of Soft Matter Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
  • He J; Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China.
Science ; 384(6691): 81-86, 2024 Apr 05.
Article in En | MEDLINE | ID: mdl-38574137
ABSTRACT
Thermoelectric materials can realize direct and mutual conversion between electricity and heat. However, developing a strategy to improve high thermoelectric performance is challenging because of strongly entangled electrical and thermal transport properties. We demonstrate a case in which both pseudo-nanostructures of vacancy clusters and dynamic charge-carrier regulation of trapped-hole release have been achieved in p-type lead telluride-based materials, enabling the simultaneous regulations of phonon and charge carrier transports. We realized a peak zT value up to 2.8 at 850 kelvin and an average zT value of 1.65 at 300 to 850 kelvin. We also achieved an energy conversion efficiency of ~15.5% at a temperature difference of 554 kelvin in a segmented module. Our demonstration shows promise for mid-temperature thermoelectrics across a range of different applications.

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Science Year: 2024 Document type: Article Affiliation country: Country of publication:

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Science Year: 2024 Document type: Article Affiliation country: Country of publication: